IGBT Module MMG600V075X6T7 750V 600A Three Phase Bridge Pinfin Substrate for Energy Storage and Renewable Power Systems

IGBT Module MMG600V075X6T7 750V 600A Three Phase Bridge Pinfin Substrate for Energy Storage and Renewable Power Systems

MACMIC Technologies 2006 China
  • IGBT Module MMG600V075X6T7 750V 600A Three Phase Bridge Pinfin Substrate for Energy Storage and Renewable Power Systems
  • IGBT Module MMG600V075X6T7 750V 600A Three Phase Bridge Pinfin Substrate for Energy Storage and Renewable Power Systems
Summary
MMG600V075X6T7 IGBT Module, a high-performance power semiconductor module designed for energy storage and renewable power systems. Featuring a 750V/600A rating, M7i technology, and Three Phase Bridge configuration, it ensures high efficiency and reliability. With a low VCE(sat) of 1.11V and excellent thermal performance (RthJC 0.16K/W), this Pinfin Substrate-based module delivers superior heat dissipation and durability in demanding applications.More
  • IGBT Module MMG600V075X6T7 750V 600A Three Phase Bridge Pinfin Substrate for Energy Storage and Renewable Power Systems
MACMIC Technologies
MACMIC Technologies
2006
China
IGBT, MOSFET, FRD, SiC chips, discrete devices, modules
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