IGBT Module MMG80C120BF_Y1 1200V 80A 3-level T-NPC Configuration Copper-free Substrate for Energy Storage and Battery Systems

IGBT Module MMG80C120BF_Y1 1200V 80A 3-level T-NPC Configuration Copper-free Substrate for Energy Storage and Battery Systems

MACMIC Technologies 2006 China
  • IGBT Module MMG80C120BF_Y1 1200V 80A 3-level T-NPC Configuration Copper-free Substrate for Energy Storage and Battery Systems
  • IGBT Module MMG80C120BF_Y1 1200V 80A 3-level T-NPC Configuration Copper-free Substrate for Energy Storage and Battery Systems
Summary
The MMG80C120BF_Y1 IGBT module is a high-performance power electronics solution designed for energy storage and battery systems. Featuring a 1200V/80A rating with advanced M3i technology, this module utilizes a 3-level T-NPC configuration and copper-free substrate for enhanced thermal efficiency and reliability. Ideal for renewable energy and industrial applications, it delivers low saturation voltage (VCE sat: 1.90V) and excellent thermal resistance (RthJC: 0.54K/W), ensuring optimal performance in demanding environments.More
  • IGBT Module MMG80C120BF_Y1 1200V 80A 3-level T-NPC Configuration Copper-free Substrate for Energy Storage and Battery Systems
MACMIC Technologies
MACMIC Technologies
2006
China
IGBT, MOSFET, FRD, SiC chips, discrete devices, modules
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